volume | PIER Journals

Abstract

In this paper, 5G communication system requires high broadband, high efficiency, low distortion and good heat dissipation for RF power amplifier. A GaN RF power amplifier working in broadband is designed. The input and output matching is processed on the Al2O3 ceramic substrate with bond wire, and the tube shell is packaged with CuMoCu copper alloy shell. Because the power loss of the power amplifier will produce a lot of heat, the heat dissipation problem becomes a factor that can not be ignored in the design. Using the finite element thermal simulation analysis method, the maximum temperature of the power amplifier chip under long time operation is 85℃, which meets the heat dissipation demand. Under the continuous wave test conditions, the drain voltage is 30 V; the operating frequency band is 2~6 GHz; the saturation output power is 42 dBm; the power gain is more than 45 dB; and the power added efficiency is 40%. The test results meet the actual demand.

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Dr. Fusheng Zhao

Mr. Xin Cheng

Mr. Zhanglei Song

Professor Fayu Wan

Dr. Zhenhua Chen

Dr. Xing Zhao