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2023-02-02
Numerical and Measurement Based Modeling of a MIM Capacitor in a 0.25 um SiGe -C BiCMOS Process
By
Progress In Electromagnetics Research C, Vol. 129, 173-186, 2023
Abstract
This study presents the generation of a scalable model based on measurement aided numerical calculations for MiMCap (Metal-Insulator-Metal Capacitor) structures with a 0.25 µm SiGe-C BiCMOS technology. Various MiM capacitor structures with several different area and peripheral sizes are fabricated in an in-house developed BiCMOS process. A set of fix-size models and a generic scalable model are developed based on numerical EM calculations. The validity of the constructed model is verified with the measurement results. The model includes the breakdown voltage ratings which are also extracted through the measurements. The model, EM simulations and measurement results are in good agreement.
Citation
Huseyin Aniktar, and Huseyin Serif Savci, "Numerical and Measurement Based Modeling of a MIM Capacitor in a 0.25 um SiGe -C BiCMOS Process," Progress In Electromagnetics Research C, Vol. 129, 173-186, 2023.
doi:10.2528/PIERC22112103
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