Vol. 112

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2021-04-22

Research on Conducted EMI Characteristics of SiC MOSFET Considering Temperature Effect

By Ming-Xing Du, Weiguo Bian, Hongbin Wang, Qiqi Dai, and Ziwei Ouyang
Progress In Electromagnetics Research C, Vol. 112, 69-82, 2021
doi:10.2528/PIERC21030303

Abstract

The junction temperature change of SiC MOSFET will change its switching process, and then affect the electromagnetic interference (EMI) characteristics of the system where the device is located and the safe operation of the surrounding equipment. Therefore, it is of great significance to research the temperature dependence of its EMI characteristics. In this paper, a buck converter composed of SiC MOSFET is taken as the research object to study the temperature variation characteristics of the conducted EMI spectrum during the switching process. Combined with the specific circuit connection form of the buck converter, the coupling paths of the conducted EMI are determined, and then the influence mechanisms of temperature change on the differential mode (DM) interference and common mode (CM) interference are analyzed. The theoretical analysis and experimental results show that the DM interference of the buck converter composed of SiC MOSFET increases with the increase of temperature, and the CM interference is almost unaffected by temperature. When the working temperature increases from 25˚C to 145˚C, the peak value of DM voltage increases by 6.7 dBμV, and the peak value of CM voltage changes less than 1.4 dBμV.

Citation


Ming-Xing Du, Weiguo Bian, Hongbin Wang, Qiqi Dai, and Ziwei Ouyang, "Research on Conducted EMI Characteristics of SiC MOSFET Considering Temperature Effect," Progress In Electromagnetics Research C, Vol. 112, 69-82, 2021.
doi:10.2528/PIERC21030303
http://jpier.org/PIERC/pier.php?paper=21030303

References