volume | PIER Journals

Abstract

In this paper, the on-wafer S-parameter measurement of InP-Based HEMT devices up to 220\,GHz is presented. The calibration kits utilizing a CPWG structure are meticulously designed on an InP substrate. The corresponding structure for calibrating the reflection mechanism is designed in order to reduce the influence between the two ports during the calibration process and improve isolation. The TSVs process is employed to attain broadband load. The design concept of the calibration structure is discussed, and the simulation results up to 220\,GHz are provided for demonstration. The measurement results encompass frequency ranges of 0.2-66 GHz, 75-110 GHz, 110-170 GHz, and 170-220 GHz. Moreover, the test results obtained from different calibration methods for InP HEMT devices are compared and analyzed. By employing interpolation techniques, comprehensive S-parameter data for actual DUTs ranging from 0.2 to 220 GHz is successfully obtained. Furthermore, the intrinsic parameters C_gs is extracted from device test results, and various calibration methods are utilized for comparison. The extrapolated maximum current gain cut-off frequency f_T based on a -20 dB/decade slope in H₂₁ is determined as 252 GHz while the extrapolated device maximum oscillation frequency fmax calculated through the maximum stable gain (MSG)/the maximum available gain (MAG) and Umason approaches reaches up to 435 GHz.

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doi:10.1109/TMTT.2018.2832067

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Dr. Haiyan Lu

Dr. Jixin Chen

Dr. Zhongfei Chen

Dr. Yuan Sun

Dr. Luwei Qi

Dr. Siyuan Tang

Dr. Hongqi Tao

Dr. Tangsheng Chen

Professor Wei Hong