volume | PIER Journals

Abstract

We investigate thermal noise mechanisms and present analytical expressions of the noise power spectral density at high frequencies (HF) in Silicon-on-insulator (SOI) MOSFETs. The developed HF noise model of RF T-gate body contact (TB) SOI MOSFET for 0.13-μm SOI CMOS technology accounts for the mechanisms of 1) channel thermal noise; 2) induced gate noise; 3) substrate resistance noise and 4) gate resistance thermal noise. The extraction method of modeling parameter utilized by Y-parameter analysis on the proposed small-signal equivalent circuit is demonstrated in this paper. Excellent agreement between simulated and measured noise data is obtained at different temperatures.

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Dr. Xiang Wang

Dr. Yuping Huang

Dr. Jun Liu

Dr. Jie Wang