volume | PIER Journals

Abstract

This paper presents a wideband model, from Direct Current (DC) to W band, for a single Anode Schottky Diode based on a commercial VDI chip. Different measurements have been performed to obtain a complete large-signal equivalent circuit model suitable for the device under consideration up to 110 GHz, and for its integration in planar circuits. The modeling has been done using a combination of DC, capacitance measurements, and RF scattering measurements. The test structure for on-wafer S-parameter characterization has been developed to obtain an equivalent circuit for Coplanar to Microstrip (CPW-Microstrip) transitions, then verified with 3D Electromagnetic (EM) tools and finally used to de-embed device measurements from empirical data results in W band. 3D EM simulation of the diodes was used to initialize the parasitic parameters. Those significant extrinsic elements were combined with the intrinsic elements. The results show that the proposed method is suitable to determine parameters of the diode model with an excellent fit with measurements. Using this model, the simulated performance for a number of diode structures has given accurate predictions up to 110 GHz. Some anomalous phenomena such as parasitic resistance dependence on frequency have been found.

1. Yeom, S., D. Lee, H. Lee, J. Son, and V. P. Guschin, "Distance estimation of concealed objects with stereoscopic passive millimeter-wave imaging," Progress In Electromagnetics Research,, Vol. 115, 399-407, 2011.

2. Oka, , S., H. Togo, N. Kukutsu, and T. Nagatsuma, "Latest trends in millimeter-wave imaging technology," Progress In Electromagnetics Research Letters, Vol. 1, 197-204, 2008.
doi:10.2528/PIERL07120604

3. Zhao, , M., Y. Fan, D. Wu, and J. Zhan, , "The investigation of W band microstrip integrated high order frequency multiplier based on the nonlinear model of avalanche diode," Progress In Electromagnetics Research, Vol. 85, 439-453, 2008.
doi:10.2528/PIER08090702

4. Zhan, , M. Z., W. Zhao, and R. M. Xu, "Design of millimeter-wave widband mixer with a novel IF bloc," Progress In Electromagnetics Research C, Vol. 30, 41-52, 2012.
doi:10.2528/PIERL11112704

5. Arboli, M. R.-G., "Monolithic integration of non linear circuits for terahertz applications," Ph.D. Thesis, University of Darmstadt , 2003.

6. Crowe, T. W., "GaAs Schottky barrier mixer diodes for the frequency range 1--10 THz," International Journal of Infrared and Millimeter Waves, Vol. 10, 765-777, Jul. 1989.
doi:10.1007/BF01011489

7. Bhaumik, , K., B. Gelmont, R. Mattauch, and M. Shur, , "Series impedance of GaAs planar Schottky diodes operated to 500 GHz," IEEE Transactions on Microwave Theory and Techniques, Vol. 40, 880-885, 1992.
doi:10.1109/22.137393

8. Xu, H., G. S. Schoenthal, L. Liu, Q. Xiao, J. L. Hesler, and R. M. Weikle, "On estimating and canceling parasitic capacitance in submillimeter-wave planar Schottky diodes," IEEE Microwave and Wireless Components Letters, Vol. 19, 807-809, , 2009.
doi:10.1109/LMWC.2009.2033518

9. Tang, , A. Y., V. Drakinskiy, P. Sobis, J. Vukusic, and J. Stake, "Modeling of GaAs Schottky diodes for terahertz application," 34th International Conference on Infrared, Millimeter, and Terahertz Waves, 2009.

10. Torrey, H. C., C. A. Whitmer, and , "Crystal Rectifiers," MIT Radiation Lab. Series, No. 15, 1948.

11. Sze, , S. M., K. K. Ng, and , "Physics of Semiconductor Devices," John Wiley & Sons Inc.,, 2007.

12. Golio, , J. M., , Microwave MESFETs and HEMTs, , 1991..

13. Fernandez, , T., , "Dise~no de un sistema experimental automatico para la caracterizacion DC Y pulsada de transistores de alta frecuencia," Masters Dissertation University of Cantabria, Oct. 1991.

14..
doi:www.virginiadiodoes.com.

15. Sze, , S. M., , Semiconductor Devices Physics and Technology,, 2nd Ed., John Wiley & Sons, Inc., , 2002.

16. Maas, , S. A., , Microwave Mixers, , 2nd Ed., Artech House, Inc., 1993.

17. Palmer, , D. W., "Characterisation of semiconductors by capacitance methods," Growth and Characterisation of Semiconductors, 187-224, 1990.

18. Kiuru, , T., K. Dahlberg, J. Mallat, A. V. RÄaisÄanen, and T. NÄarhi, "Comparison of low-frequency and microwave frequency capacitance determination techniques for mm-wave Schottky diodes," European Microwave Integrated Circuits Conference (EuMIC), Manchester, UK, , Oct. 2011.

19. MAottAonen, , V. S., J. Mallat, and A. V. RAaisAanen, "Characterisation of European millimetre-wave planar diodes," European Microwave Conference, , 921-924, , Oct. 2004.

20. ProbePoint 1003, "Test interface circuit-coplanar to microstrip,"," Jmicro Technology..

21. Tummala, , R., E. Rymaszuweski, and , Microelectronics Packaging Handbook, , Van Nostrand Reinhold, , 1989..

22. Lucyszyn, , S., G. Green, and I. D. Robertson, "Accurate millimeter-wave large signal modeling of planar Schottky varactor diodes," IEEE MTT-S International on Microwave Symposium Digest , Vol. 1, 1992..

23. Greenhouse, , H., "Design of planar rectangular microelectronic inductors," IEEE Transactions on Parts, Hybrids, and Packaging , Vol. 10, No. 2, 101-109, , Jun. 1974.
doi:10.1109/TPHP.1974.1134841

24. Jahn, D., R. Reuter, Y. Yin, and J. Feige, "Characterization and modeling of wire bond interconnects up to 100 GHz," IEEE on Compound Semiconductor Integrated Circuit Symposium, CSIC, 111-114, , Nov. 2006.

25. Lee, , H.-Y., , "Wideband characterization of a typical bonding wire for microwave and millimeter-wave integrated circuits," IEEE Transactions on Microwave Theory and Techniques, Vol. 43, No. 1, Jan. 1995.

26. Purroy, F., L. Pradell, and , "New theoretical analysis of the LRRM calibration technique for vector network analyzers," IEEE Transactions on Instrumentation and Measurement, Vol. 50, No. 5, 1307-1314, , Oct. 2001.
doi:10.1109/19.963202

27..
doi:http://www.omlinc.com/products/vna-extension-modules/wr-

Dr. Kaoutar Zeljami

Dr. Jessica Gutierrez

Dr. Juan Pablo Pascual

Dr. Tomas Fernandez Ibanez

Prof. Antonio Tazón

Dr. Mohamed Boussouis