volume | PIER Journals

Abstract

This paper describes the alternating-direction implicit finite-difference time-domain (ADI-FDTD) method for physical modeling of high-frequency semiconductor devices. The model contains the semiconductor equations in conjunction with the Maxwell's equations which describe the complete behavior of high-frequency active devices. Using ADI approach leads to a significant reduction of the full-wave simulation time. We can reach over 99% reduction in the simulation time by using this technique while still have a good degree of accuracy compared to the conventional approaches. As the first step in the performance investigation, we use the electrons flow equations in the absence of holes and recombination as semiconductor equations in this paper.

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Mr. Rashid Mirzavand

Dr. Abdolali Abdipour

Dr. Gholamreza Moradi

Dr. Masoud Movahhedi