volume | PIER Journals

2008-01-03

Transport Properties of Delta-Doped Field Effect Transistor

Outmane Oubram,

Dr. Outmane Oubram

Instituto de Fisica

Universidad Autonoma de Puebla

Mexico

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Luis Manuel Gaggero-Sager

Prof. Luis Manuel Gaggero-Sager

Facultad de Ciencias

Universidad Autonoma del Estado de Morelos

Mexico

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, Vol. 2, 81-87, 2008

doi:10.2528/PIERL07122810

Abstract

The first calculation of mobility and conductivity between source and drain as function of gate voltage in a δ-doped Field Effect Transistor is presented. The calculation was performed with a model for the δ-FET that was shown in [1]. The mobility was calculated using a phenomenological expression that was presented in [2]. That expression does not have empirical form, neither empirical parameter. For the first time a phenomenological expression of the conductivity is presented, which is derived from the mobility expression. The conductivity shows three different regions: a parabolic region and two linear regions. The parabolic region represents the region at which the conduction channel begins to close. On the other hand, the mobility shows a more different behavior. In the mobility there are four regions. These regions correspond to the disappearance of the different conduction channels that form the subbands of the deltadoped quantum well. The different behavior between mobility and conductivity relies on the depletion of the delta-doped quantum well as the gate potential grows.

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Outmane Oubram, and Luis Manuel Gaggero-Sager, "Transport Properties of Delta-Doped Field Effect Transistor," , Vol. 2, 81-87, 2008.
doi:10.2528/PIERL07122810

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