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Abstract

We present the electronic spectrum of a n-type deltadoped quantum well in Si coupled to a p-type delta-doped barrier within the envelope function effective mass approximation. We applied the Thomas-Fermi approximation to derive an analytical expression for the confining potential, and thus, we obtain the electronic structure in a simple manner. We analyzed the electron subband structure varying the distance between the doping planes (l) as well as the impurity density in them (n_2D, p_2D). We also study the mobility trends through an empirical formula that is based on the electron levels, the electron wave functions and the Fermi level. We find a monotonic decrease in the mobility as the p-type barrier moves away from the n-type well, and optimum parameters, l = 70A and n_2D = 5 × 10¹² cm^-2 and p_2D = 5×10¹³ cm^-2, for maximum mobility.

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Dr. Augusto Ariza-Flores

Dr. Isaac Rodríguez-Vargas