1. Filicori, F., G. Vannini, A. Santarelli, A. M. Sanchez, A. Tazon, and Y. Newport, "Empirical modeling of low-frequency dispersive e®ects due to traps and thermal phenomena in III-V FET's," IEEE Trans. on Microwave Theory and Tech., Vol. 43, No. 12, 2972-2981, Dec. 1995.
doi:10.1109/22.475663
2. Rodriguez-Tellez, J., T. Fernandez, A. Mediavilla, and A. Tazon, "Characterization of thermal and frequency-dispersion effects in GaAs MESFET devices," IEEE Trans. on Microwave Theory and Tech., Vol. 49, No. 7, 1352-1355, Jul. 2001.
doi:10.1109/22.932259
3. Anholt, R. E. and S. E. Swirhun, "Experimental investigation of the temperature dependence of GaAs FET equivalent circuit," IEEE Trans. on Electron Devices, Vol. 39, No. 9, 2029-2036, Sep. 1992.
doi:10.1109/16.155874
4. Sang, L., Y. Xu, Y. Chen, Y. Guo, and R.-M. Xu, "Large signal equivalent circuit model for package ALGaN/GaN HEMT," Progress In Electromagnetics Research Letters, Vol. 20, 27-36, 2011.
5. Xu, Y., Y. Guo, L. Xia, and Y. Wu, "An support vector regression based nonlinear modeling method for SiC MESFET," Progress In Electromagnetics Research Letter, Vol. 2, 103-114, 2008.
doi:10.2528/PIERL07122102
6. Elsharkawy, R. R., E. S. El-Rabaie, M. Hindy, R. S. Ghoname, and M. I. Dessouky, "FET small-signal modelling based on the DST and MEL frequency ceptral coefficients," Progress In Electromagnetics Research B, Vol. 18, 185-204, 2009.
doi:10.2528/PIERB09082001
7. Lardizabal, S. M., A. S. Fernandez, and L. P. Dunleavy, "Temperature-dependent modeling of gallium arsenide MES-FET's," IEEE Trans. on Microwave Theory and Tech., Vol. 44, No. 3, 357-363, Mar. 1996.
doi:10.1109/22.486144
8. Selmi, L. and B. Ricco, "Modeling temperature effects in the DC I-V characteristics of GaAs MESFET's," IEEE Trans. on Electron Devices, Vol. 40, No. 2, 273-277, Feb. 1993.
doi:10.1109/16.182500
9. Hasumi, Y., N. Matsunaga, T. Oshima, and H. Kodera, "Characterization of the frequency dispersion of transconductance and drain conductance of GaAs MESFET," IEEE Trans. on Microwave Theory and Tech., Vol. 50, No. 10, 2032-2038, Oct. 2003.
10. Caddemi, A. and N. Donato, "Characterization techniques for temperature-dependent experimental analysis of microwave transistors," IEEE Trans. on Instrumentation and Meas., Vol. 52, No. 1, 85-91, Feb. 2003.
doi:10.1109/TIM.2003.809079
11. Deng, J., W. Wang, S. Halder, W. R. Curtice, J. C. M. Hwang, V. Adivarahan, and M. A. Khan, "Temperature-dependent RF large-signal model of GaN-based MOSHFETs," IEEE Trans. on Microwave Theory and Tech., Vol. 56, No. 12, 2709-2716, Dec. 2008.
doi:10.1109/TMTT.2008.2007083
12. Golio, J. M., M. G. Miller, G. N. Maracas, and D. A. Johnson, "Frequency-dependent electrical characteristics of GaAs MES-FET's," IEEE Trans. on Electron Devices, Vol. 37, No. 5, 1217-1227, May 1990.
doi:10.1109/16.108182
13. Roh, T., Y. Kim, Y. Suh, W. Park, and B. Kim, "A simple and accurate MESFET channel-current model including bias-dependent dispersion and thermal phenomena," IEEE Trans. on Microwave Theory and Tech., Vol. 45, No. 8, 1252-1255, Aug. 1997.
doi:10.1109/22.618416
14. Parker, A. E. and J. G. Rathmell, "Bias and frequency dependence of FET characteristics," IEEE Trans. on Microwave Theory and Tech., Vol. 51, No. 2, 588-592, Feb. 2003.
doi:10.1109/TMTT.2002.807819
15. Tirado, J. M., J. L. Sanchez-Rojas, and J. I. Izpura, "Trapping effects in the transient response of AlGaN/GaN HEMT devices," IEEE Trans. on Electron Devices, Vol. 54, No. 3, 410-417, Mar. 2007.
doi:10.1109/TED.2006.890592
16. Faqir, M., G. Verzellesi, A. Chini, F. Fantini, F. Danesin, G. Meneghesso, E. Zanoni, and C. Dua, "Mechanisms of RF current collapse in AlGaN-GaN high electron mobility transistors," IEEE Trans. on Device and Materials Reliability, Vol. 8, No. 2, 240-247, Jun. 2008.
doi:10.1109/TDMR.2008.922017
17. Binari, S. C., K. Ikossi, J. A. Roussos, W. Kruppa, D. Park, H. B. Dietrich, D. D. Koleske, A. E. Wickenden, and R. L. Henry, "Trapping effects and microwave power performance in AlGaN/GaN HEMTs," IEEE Trans. on Electron Devices, Vol. 48, No. 3, 465-471, Mar. 2001.
doi:10.1109/16.906437
18. Joh, J., J. A. del Alamo, and J. Jimenez, "A simple current collapse measurement technique for GaN high-electron mobility transistors," IEEE Electron Device Letters, Vol. 29, No. 7, 665-667, Jul. 2008.
doi:10.1109/LED.2008.2000919
19. Meneghesso, G., G. Verzellesi, R. Pierobon, F. Rampazzo, A. Chini, U. K. Mishra, C. Canali, and E. Zanoni, "Surface-related drain current dispersion effects in AlGaN-GaN HEMTs," IEEE Trans. on Electron Devices, Vol. 51, No. 10, 1554-1561, Oct. 2004.
doi:10.1109/TED.2004.835025
20. Angelov, I., L. Bengtsson, and M. Garcia, "Extensions of the chalmers nonlinear HEMT and MESFET model," IEEE Trans. on Microwave Theory and Tech., Vol. 44, No. 10, 1664-1674, Oct. 1996.
doi:10.1109/22.538957
21. Curtice, W. R., "A MESFET model for use in the design of GaAs integrated circuits," IEEE Trans. on Microwave Theory and Tech., Vol. 28, No. 5, 448-456, May 1980.
doi:10.1109/TMTT.1980.1130099
22. Statz, H., P. Newman, I. W. Smith, R. A. Pucel, and H. A. Haus, "GaAs FET device and circuit simulation in SPICE," IEEE Trans. on Electron Devices, Vol. 34, No. 2, 160-169, Feb. 1987.
doi:10.1109/T-ED.1987.22902
23. Materka, A. and T. Kacprzak, "Computer calculation of large-signal GaAs FET amplifier characteristics," IEEE Trans. on Microwave Theory and Tech., Vol. 33, No. 2, 129-135, Feb. 1985.
doi:10.1109/TMTT.1985.1132960
24. Roff , C., J. Benedikt, P. J. Tasker, D. J. Wallis, K. P. Hilton, J. O. Maclean, D. G. Hayes, M. J. Uren, and T. Martin, "Analysis of DC-RF dispersion in AlGaN/GaN HFETs using RF waveform engineering," IEEE Trans. on Electron Devices, Vol. 56, No. 1, 13-18, Jan. 2009.
doi:10.1109/TED.2008.2008674
25. Zhao, J. H., R. Hwang, and S. Chang, "On the characterization of surface states and deep traps in GaAs MESFETs," Solid-State Electronics, Vol. 36, No. 12, 1665-1672, Dec. 1993.
doi:10.1016/0038-1101(93)90211-8
26. Tirado, J. M., J. L. Sanchez-Rojas, and J. I. Izpura, "2D simulation of static surface states in AlGaN/GaN HEMT and GaN MESFET devices," Semiconductor Science and Technology, Vol. 20, 864-869, 2005..
doi:10.1088/0268-1242/20/8/042
27. Braga, N. and R. Mickevicius, "Simulation of gate lag and current collapse in gallium nitride field-effect transistors," Applied Physics Letters, Vol. 85, No. 20, 4780-4782, Nov. 2004.
doi:10.1063/1.1823018
28. Horio, K. and T. Yamada, "Two-dimensional analysis of surface-state effects on turn-on characteristics in GaAs MESFETs," IEEE Trans. on Electron Devices, Vol. 46, No. 4, 648-655, Apr. 1999.
doi:10.1109/16.753696
29. Zhang, L., L. F. Lester, A. G. Baca, R. J. Shul, P. C. Chang, C. G. Willison, U. K. Mishra, S. P. Denbaars, and J. C. Zolper, "Epitaxially-grown GaN junction field effect transistors," IEEE Trans. on Electron Devices, Vol. 47, No. 3, 507-511, Mar. 2000.
doi:10.1109/16.824716
30. Bradley, S. T., A. P. Young, L. J. Brillson, M. J. Murphy, and W. J. Schaff, "Role of barrier and buffer layer defect states in AlGaN/GaN HEMT structures," Journal of Electronic Materials, Vol. 30, No. 3, 123-128, Mar. 2001.
doi:10.1007/s11664-001-0004-4
31. Koley, G., V. Tilak, L. F. Eastman, and M. G. Spencer, "Slow transients observed in AlGaN/GaN HFETs: Effects of SiNx passivation and UV illumination," IEEE Trans. on Electron Devices, Vol. 50, No. 4, 886-893, Apr. 2003.
doi:10.1109/TED.2003.812489
32. Charache, G. W., S. Akram, E. W. Maby, and I. B. Bhat, "Surface passivation of GaAs MESFET's," IEEE Trans. on Electron Devices, Vol. 44, No. 11, 1837-1842, Nov. 1997.
doi:10.1109/16.641350
33. Tenedorio, J. G. and P. A. Terzian, "Effects of Si3N4, SiO, and polyimide surface passivations on GaAs MESFET amplifier RF stability," IEEE Electron Device Letters, Vol. 5, No. 6, 199-202, Jun. 1984.
doi:10.1109/EDL.1984.25886
34. Raffo, A., A. Santarelli, P. A. Traverso, G. Vannini, F. Palomba, F. Scappaviva, M. Pagani, and F. Filicori, "Accurate pHEMT nonlinear modeling in the presence of low-frequency dispersive effects," IEEE Trans. on Microwave Theory and Tech., Vol. 53, No. 11, 3449-3459, Nov. 2005.
doi:10.1109/TMTT.2005.859034
35. Koh, K., H.-M. Park, and S. Hong, "A spline large-signal FET model based on bias-dependent pulsed I-V measurement," IEEE Trans. on Microwave Theory and Tech., Vol. 50, No. 11, 2598-2603, Nov. 2002.
doi:10.1109/TMTT.2002.804509
36. Fernandez, T., Y. Newport, J. M. Zamanillo, A. Tazon, and A. Mediavilla, "Extracting a bias-dependent large signal MESFET model from pulsed I/V measurements," IEEE Trans. on Microwave Theory and Tech., Vol. 44, No. 3, 372-378, Mar. 1996.
doi:10.1109/22.486146
37. Jeon, K.-I., Y.-S. Kwon, and S.-C. Hong, "A frequency dispersion model of GaAs MESFET for large-signal applications," IEEE Microwave Guided Wave Lett., Vol. 7, No. 3, 78-80, Mar. 1997.
doi:10.1109/75.556038
38. Jarndal, A. and G. Kompa, "Large-signal model for AlGaN/GaN HEMTs accurately predicts trapping- and self-heating-induced dispersion and intermodulation distortion," IEEE Trans. on Electron Devices, Vol. 54, No. 11, 2830-2836, Nov. 2007.
doi:10.1109/TED.2007.907143
39. Jardal, O., F. D. Groote, T. Reveyrand, J.-C. Jacquet, C. Charbonniaud, J.-P. Teyssier, D. Floriot, and R. Quere, "An electrothermal model for AlGaN/GaN power HEMTs including trapping effects to improve large-signal simulation results on high VSWR," IEEE Trans. on Microwave Theory and Tech., Vol. 55, No. 12, 2660-2669, Dec. 2007.
doi:10.1109/TMTT.2007.907141
40. Yuk, K. S. and G. R. Branner, "An empirical large-signal model for SiC MESFETs with sefl-heating thermal model," IEEE Trans. on Microwave Theory and Tech., Vol. 56, No. 11, 2671-2680, Nov. 2008.
doi:10.1109/TMTT.2008.2005922
41. Chaibi, M., T. Fernamdez, J. Rodriguez-Tellez, J. L. Cano, and M. Aghoutane, "Accurate large-signal single current source thermal model for GaAs MESFET/HEMT," Electronics Lett., Vol. 43, No. 14, 775-777, Jul. 2007.
doi:10.1049/el:20071111
42. Jastrzebski, A. K., "Characterisation and modelling of temperature and dispersion effects in power MESFETs," Proc. 24rd European Microwave Conf., 1319-1324, Cannes, France, Sep. 1994.
43. Fernandez, T., J. A. Garcia, A. Tazon, A. Mediavilla, J. C. Pedro, and J. L. Garcia, "Accurately modeling the drain to source current in recessed gate P-HEMT devices," IEEE Electron Device Lett., Vol. 20, No. 11, 557-559, Nov. 1999.
doi:10.1109/55.798042
44. Cabral, P. M., J. C. Pedro, and N. B. Carvalho, "Nonlinear device model of microwave power GaN HEMTs for high power-amplifier design," IEEE Trans. on Microwave Theory and Tech., Vol. 52, No. 11, 2585-2592, Nov. 2004.
doi:10.1109/TMTT.2004.837196
45. Dambrine, G., A. Cappy, F. Heliodore, and E. Playez, "A new method for determining the FET small-signal equivalent circuit," IEEE Trans. on Microwave Theory and Tech, Vol. 36, No. 7, 1151-1159, Jul. 1988.
doi:10.1109/22.3650
46. Tayrani, R., J. E. Gerber, T. Daniel, R. S. Pengelly, and U. L. Rhode, "A new and reliable direct parasitic extraction method for MESFETs and HEMTs," Proc. 23rd European Microwave Conf., 451-453, Madrid, Spain, Sep. 1993.
doi:10.1109/EUMA.1993.336593