Vol. 93

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2019-06-20

Anti-Interference Circuit Configuration for Concurrent Dual-Band Operation in High-Efficiency GaN HEMT Power Amplifier

By Haruka Nishizawa, Yoichiro Takayama, Ryo Ishikawa, and Kazuhiko Honjo
Progress In Electromagnetics Research C, Vol. 93, 199-209, 2019
doi:10.2528/PIERC19041302

Abstract

An interference on a concurrent 4.5-/8.5-GHz-band operation has been effectively suppressed by applying a duplexer technique to high-efficiency GaN HEMT power amplifiers. Each harmonic was also suppressed by a harmonic reactive termination used for a high-efficiency operation. The developed concurrent dual-band amplifier delivered a 73% drain efficiency and a 61% power-added-efficiency (PAE) with 32 dBm output power at 8.24 GHz and a 69% drain efficiency and a 64% PAE with 37 dBm output power at 4.70 GHz. Undesired cross-modulation and intermodulation signals at nearby bands occurring due to dual-band interaction have been successfully suppressed to less than -41 dBc.

Citation


Haruka Nishizawa, Yoichiro Takayama, Ryo Ishikawa, and Kazuhiko Honjo, "Anti-Interference Circuit Configuration for Concurrent Dual-Band Operation in High-Efficiency GaN HEMT Power Amplifier," Progress In Electromagnetics Research C, Vol. 93, 199-209, 2019.
doi:10.2528/PIERC19041302
http://jpier.org/PIERC/pier.php?paper=19041302

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