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2019-07-05

A New RF MEMS Capacitive Switch for k -Band Application

By Hao Wei, Shiwang Jia, Fei Zhao, Lanyuan Dang, Guanghua Liang, Yaxin Xu, and Zhongliang Deng
Progress In Electromagnetics Research C, Vol. 93, 253-263, 2019
doi:10.2528/PIERC19032403

Abstract

This paper proposes a novel RF MEMS capacitive shunt switch, which is applied in K-band (18~26.5 GHz). The characteristic impedance matching of the RF MEMS switch is achieved by discontinuous coplanar waveguide (DCPW) structure. Two actuation poles are located at the bottom of the fixed-fixed beam, and they are covered with a dielectric layer of SiN. The pole's thickness is less than that of CPW signal, to avoid the phenomenon of dielectric charging betweenthe beam and the pole. The proposed MEMS switch is fabricated on 400 μm-thickness high resistivity silicon, using the MEMS surface micromachining process. Measured results demonstrate that, at K-band, the return loss is better than 22 dB, and the insertion loss and isolation are better than 0.5 and 17 dB, respectively. The on/off switched timeis 168/54 μs when the DC bias voltage is 0/54 V. This proposed MEMS switch provides a solution for K-band communication system applications.

Citation


Hao Wei, Shiwang Jia, Fei Zhao, Lanyuan Dang, Guanghua Liang, Yaxin Xu, and Zhongliang Deng, "A New RF MEMS Capacitive Switch for k -Band Application," Progress In Electromagnetics Research C, Vol. 93, 253-263, 2019.
doi:10.2528/PIERC19032403
http://jpier.org/PIERC/pier.php?paper=19032403

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