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2012-11-12

Low-Insertion Loss PIN Diode Switches Using Impedance-Transformation Networks

By Mingming Liu, Rong-Hong Jin, Jun-Ping Geng, and Xianling Liang
Progress In Electromagnetics Research C, Vol. 34, 195-202, 2013
doi:10.2528/PIERC12092604

Abstract

Two SPDT switches that have low insertion loss with impedance-transformation networks are presented. The proposed SPDT switches are comprised of two shunt PINs and two quarter-wavelength microstrip lines together with impedance transformation networks, which canceled the capacitance effect at off-state and the inductance effect at on-state simultaneously. The simulated insertion loss performance is less than 0.3 dB and the fabricated ones exhibit on-state low insertion loss of 0.5 dB within the range of 4.6-4.8 GHz.

Citation


Mingming Liu, Rong-Hong Jin, Jun-Ping Geng, and Xianling Liang, "Low-Insertion Loss PIN Diode Switches Using Impedance-Transformation Networks," Progress In Electromagnetics Research C, Vol. 34, 195-202, 2013.
doi:10.2528/PIERC12092604
http://jpier.org/PIERC/pier.php?paper=12092604

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