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2012-07-04

High Performance V-Band GaAs Low Noise Amplifier with Modified Coplanar Waveguide EBG Transmission Lines Technology

By Po-Yu Ke, Fan-Hsiu Huang, and Hsien-Chin Chiu
Progress In Electromagnetics Research C, Vol. 31, 41-52, 2012
doi:10.2528/PIERC12042911

Abstract

This paper presents an integrated millimeter-wave (mmW) low noise amplifier (LNA) which is implemented by using 0.15-μm baseline GaAs pHEMT technology. The design utilized modified co-planar waveguide (CPW) to perform a slow wave transmission line (TLine) with electromagnetic band gap (EBG) ground structures for the input/output matching networks. The low noise V-band LNA chip size was hence reduced by adopting the new EBG transmission lines. The developed amplifier exhibited a noise figure of 6.21 dB, and a peak gain of 17.3 dB at 66 GHz. Additionally, the amplifier has linear characteristics and its measured third-order intercept (IIP3) point is greater than -0.5 dBm a dc power consumption of 75 mW.

Citation


Po-Yu Ke, Fan-Hsiu Huang, and Hsien-Chin Chiu, "High Performance V-Band GaAs Low Noise Amplifier with Modified Coplanar Waveguide EBG Transmission Lines Technology," Progress In Electromagnetics Research C, Vol. 31, 41-52, 2012.
doi:10.2528/PIERC12042911
http://jpier.org/PIERC/pier.php?paper=12042911

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