Vol. 9

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2009-07-15

Design of 3 to 5 GHz CMOS Low Noise Amplifier for Ultra-Wideband (UWB) System

By Sew-Kin Wong, Fabian Kung Wai Lee, Siti Maisurah, Mohd Nizam Bin Osman, and See Jin Hui
Progress In Electromagnetics Research C, Vol. 9, 25-34, 2009
doi:10.2528/PIERC09062202

Abstract

A single-stage ultra-wideband (UWB) CMOS low noise amplifier (LNA) employing interstage matching inductor on conventional cascode inductive source degeneration structure is presented in this paper. The proposed LNA is implemented in 0.18 μm CMOS technology for a 3 to 5 GHz ultra-wideband system. By careful optimization, an interstage inductor can increase the overall broadband gain while maintaining a low level of noise figure of an amplifier. The fabricated prototype has a measured power gain of +12.7 dB, input return loss of 18 dB, output return loss of 3 dB, reverse isolation of 35 dB, noise figure of 4.5 dB and input IP3 of -1 dBm at 4 GHz, while consuming 17 mW of DC dissipation at a 1.8 V supply voltage.

Citation


Sew-Kin Wong, Fabian Kung Wai Lee, Siti Maisurah, Mohd Nizam Bin Osman, and See Jin Hui, "Design of 3 to 5 GHz CMOS Low Noise Amplifier for Ultra-Wideband (UWB) System," Progress In Electromagnetics Research C, Vol. 9, 25-34, 2009.
doi:10.2528/PIERC09062202
http://jpier.org/PIERC/pier.php?paper=09062202

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