volume | PIER Journals

2009-04-30

High-Gain CMOS Low Noise Amplifier for Ultra Wide-Band Wireless Receiver

Ali Dorafshan,

Mr. Ali Dorafshan

Electrical Engineering Department

Iran University of Science and Technology

Iran

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Mohammad Soleimani

Dr. Mohammad Soleimani

Department of Electrical Engineering

Iran University of Science and Technology

Iran

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Progress In Electromagnetics Research C, Vol. 7, 183-191, 2009

doi:10.2528/PIERC08090903

Abstract

A 3-5 GHz broadband CMOS single-ended LNA with a new theoretical approach based on least-square algorithm is presented in this paper. The design consists of a wideband input impedance matching network, a cascoded amplifier with inductively-degenerated LNA, and an output impedance matching network. It is simulated in TSMC 0.18 μm standard RF CMOS process. The optimum matching network is designed to minimize the noise figure (NF) and maximize the power gain. The element values of optimum matching network have been obtained using the least-square algorithm. The proposed LNA exhibits a gain in range of 19.9-18.9 dB, over the UWB low-band (3 to 5 GHz). Moreover, the noise figure is obtained in range of 0.6-0.8 dB. Besides, the input P1-dB and IIP3 are -10.5 dBm and 18 dBm, respectively. The proposed method has minimum 4 dB power gain improvement in relative to similar works with constant noise figure. Also, the DC supply is considered to be 1.8 V.

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Ali Dorafshan, and Mohammad Soleimani, "High-Gain CMOS Low Noise Amplifier for Ultra Wide-Band Wireless Receiver," Progress In Electromagnetics Research C, Vol. 7, 183-191, 2009.
doi:10.2528/PIERC08090903

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