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2008-04-15

Numerical Analysis of Homojunction Avalanche Photodiodes (Apds)

By Mir Hojjat Seyedi
Progress In Electromagnetics Research C, Vol. 3, 45-56, 2008
doi:10.2528/PIERC08013004

Abstract

In this paper we introduce a rigorous numerical analysis to investigate the characteristics of double carrier multiplication homojunction avalanche photodiodes (APDs) considering the nonlocal nature of the ionization process in the wide range of multiplication region width. Also in our calculations the effects of dead space has been considered. Our analyses based on the history dependent multiplication theory (HDMT) and width independent ionization coefficient.

Citation


Mir Hojjat Seyedi, "Numerical Analysis of Homojunction Avalanche Photodiodes (Apds)," Progress In Electromagnetics Research C, Vol. 3, 45-56, 2008.
doi:10.2528/PIERC08013004
http://jpier.org/PIERC/pier.php?paper=08013004

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