Vol. 146

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2014-05-26

Efficiency Improvement of P-I-n Solar Cell by Embedding Quantum Dots

By Yi-Hsien Lin and Jean-Fu Kiang
Progress In Electromagnetics Research, Vol. 146, 167-180, 2014
doi:10.2528/PIER14032701

Abstract

A model of solar cell embedding quantum dots in the intrinsic layer of a p-i-n solar cell has been presented. With proper selection of material, size and fractional volume, quantum dots can provide an intermediate band between the valence and conduction bands of the matrix material, which will absorb photons with energy lower than the original bandgap to absorb more incident photons in the otherwise unused spectral irradiance. The design approach to acquire the highest efficiency of the conventional p-i-n solar cell is presented as a benchmark. Quantum dots are then embedded in the intrinsic region of the reference solar cell to improve its efficiency. InAs is chosen to implement the quantum dots, to be embedded in the p-i-n solar cell made of GaAs. With a more packed arrangement of QD's from that in the literatures, the simulation results shows that the efficiency of the conventional GaAs p-i-n solar cell can be increased by 1.05%.

Citation


Yi-Hsien Lin and Jean-Fu Kiang, "Efficiency Improvement of P-I-n Solar Cell by Embedding Quantum Dots," Progress In Electromagnetics Research, Vol. 146, 167-180, 2014.
doi:10.2528/PIER14032701
http://jpier.org/PIER/pier.php?paper=14032701

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