Vol. 137

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2013-02-22

Near Infrared Filtering Properties in Photonic Crystal Containing Extrinsic and Dispersive Semiconductor Defect

By Chi-Chung Liu and Chien-Jang Wu
Progress In Electromagnetics Research, Vol. 137, 359-370, 2013
doi:10.2528/PIER13010107

Abstract

In this work, near infrared filtering properties in a transmission narrowband filter are theoretically investigated. The filter is a defective photonic crystal of (LH)ND(HL)N, where N is the stack number, L is SiO2, H is InP, and defect layer D is an extrinsic semiconductor of n-type silicon (n-Si). It is found that there are multiple transmission peaks within the photonic band gap (PBG) as the defect thickness increases. The filtering position can be changed by varying the doping density in n-Si. That is, the peak (channel) wavelength is blued-shifted when the doping density increases. In the angle-dependent filtering property, the channel wavelength is also blued-shifted as the angle of incidence increases for both TE and TM waves. These filtering properties are of technical use in the applications of semiconductor optoelectronics.

Citation


Chi-Chung Liu and Chien-Jang Wu, "Near Infrared Filtering Properties in Photonic Crystal Containing Extrinsic and Dispersive Semiconductor Defect," Progress In Electromagnetics Research, Vol. 137, 359-370, 2013.
doi:10.2528/PIER13010107
http://jpier.org/PIER/pier.php?paper=13010107

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