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2011-03-01

Tunable Photonic Band Gap in a Doped Semiconductor Photonic Crystal in Near Infrared Region

By Chien-Jang Wu, Ya-Chang Hsieh, and Heng-Tung Hsu
Progress In Electromagnetics Research, Vol. 114, 271-283, 2011
doi:10.2528/PIER11011808

Abstract

In this work, we theoretically investigate the tunable photonic band gap (PBG) in a semiconductor-dielectric photonic crystal made of highly doped n-type silicon (Si) layers alternating with silicon oxide layers. The tunable characteristic is studied by changing the donor impurity concentration in Si layer. The PBG is numerically analyzed in the near infrared frequency region from the reflectance calculated by the transfer matrix method. The effect of filling factor in Si layer on the photonic band gap is also illustrated. These tunable properties in such a photonic crystal provide some information that could be of technical use to the semiconductor optoelectronics, especially in communication applications.

Citation


Chien-Jang Wu, Ya-Chang Hsieh, and Heng-Tung Hsu, "Tunable Photonic Band Gap in a Doped Semiconductor Photonic Crystal in Near Infrared Region," Progress In Electromagnetics Research, Vol. 114, 271-283, 2011.
doi:10.2528/PIER11011808
http://jpier.org/PIER/pier.php?paper=11011808

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